Control of electronic structure in (Cu, Ag)(Ga, In)Se₂ for high efficiency solar cells

Abstract A three-dimensional (3D) band-gap energy ( E g ) map was constructed for a (Cu 1− y Ag )(Ga x In )Se 2 (CAGISe) system. This system’s increases monotonically from CuInSe (CISe) as the ratios of both Ga/(Ga+In) [GGI], , and Ag/(Cu+Ag) [ACA], increase. Furthermore, levels VB maximum (VBM) conduction band minimum (CBM) were also mapped in 3D. this CAGISe system, there is no significant change VBM, whereas CBM does show an increase GGI ratio increases. However, ACA increases, decrease VBM level but CBM. The substitution effects Ga Cu CISe are discussed on basis “principles orbital interaction.”